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Product classification
Discrete devices_N-MOS
Discrete devices_NPN
Discrete devices_P-MOS
Discrete devices_PNP
Discrete devices_SCR
Discrete devices_switching diode
Discrete devices_IGBT
Logical device_RTC_SRAM
Logic devices _ General micro-contr..
Logic devices _ timer
Logic devices _ the serial EEPROM
Logic devices _ serial converters
Logical device_SRAM
Logical device_RTC_NVSRAM
Logical device_NVSRAM
Logical device_SRAM2NVSRAM
Power management controller
LED power management driver
Power management _ voltage referenc..
Power management _ voltage monitors
Power management _ fan controller
Power management _ earth leakage pr..
Power management _ linear regulator..
Power management _ converter
Power management _ relay driver
Power management _ the power factor..
Signal management _ codec
Signal management _ the operational..
Audio signal management switch
Signal management _ audio amplifier
Signal management _ Compander
Signal management _ line receiver/d..
Photoelectric sensor/signal managem..
Signal management _ differential li..
Signal management _ comparator
Signal management _SIM card interfa..
Signal management _RS232/422/458
Signal management _I_O Extender
Signal management _I_O Extender
Magnetic resistance sensor switch
Phone chips
The radio chip
Automotive Electronics

 

 

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2N2222 ARTSCHIP TO-92 2N2220_2N2222.pdf 2N2220,2N2221,and 2N2222 are epitaxial NPN silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use as high-speed switches.
BC238B ARTSCHIP BC238B.pdf NPN Epitaxial Silicon Transistor
IRFZ34 ARTSCHIP TO-220AB IRFZ34N.pdf Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
BC547B ARTSCHIP TO-92 BC547A.pdf This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from Process 10. See PN 100A for characteristics.
IRFZ24 ARTSCHIP TO-220AB IRFZ24N.pdf Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device that
DS1225Y-200 ARTSCHIP DIP-28 DS1225Y.pdf The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance conditi
DS1230W-100 ARTSCHIP DIP-28 DS1230W.pdf The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condi
DS1230Y-100 ARTSCHIP DIP-28 DS1230W.pdf The DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-toleran
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Company name: ARTSCHIP ELECTRONICS CO.,LIMITED address: 76 Great Oaks Blvd.,
San Peter, CA  USA code: 518000 e-mail: wells2020@hotmail.com Copyright. 2016 ARTSCHIP ELECTRONICS CO.,LIMITED. all rights reserved. ICP 12125058