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Product classification
Discrete devices_N-MOS
Discrete devices_NPN
Discrete devices_P-MOS
Discrete devices_PNP
Discrete devices_SCR
Discrete devices_switching diode
Discrete devices_IGBT
Logical device_RTC_SRAM
Logic devices _ General micro-contr..
Logic devices _ timer
Logic devices _ the serial EEPROM
Logic devices _ serial converters
Logical device_SRAM
Logical device_RTC_NVSRAM
Logical device_NVSRAM
Logical device_SRAM2NVSRAM
Power management controller
LED power management driver
Power management _ voltage referenc..
Power management _ voltage monitors
Power management _ fan controller
Power management _ earth leakage pr..
Power management _ linear regulator..
Power management _ converter
Power management _ relay driver
Power management _ the power factor..
Signal management _ codec
Signal management _ the operational..
Audio signal management switch
Signal management _ audio amplifier
Signal management _ Compander
Signal management _ line receiver/d..
Photoelectric sensor/signal managem..
Signal management _ differential li..
Signal management _ comparator
Signal management _SIM card interfa..
Signal management _RS232/422/458
Signal management _I_O Extender
Signal management _I_O Extender
Magnetic resistance sensor switch
Phone chips
The radio chip
Automotive Electronics

 

 

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ART40U120 ARTSCHIP TO-247AC ART40U120.pdf INSULATED GATE BIPOLAR TRANSISTOR
1N60 ARTSCHIP TO-220AB 1N60.pdf The 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at
high spee
2SK2498 ARTSCHIP TO-220 2SK2498.pdf 2SK2498 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
4N60 ARTSCHIP TO-220AB 4N60.pdf The 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed swit
6N60 ARTSCHIP TO-220AB 6N60.pdf The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed swit
BUZ80A ARTSCHIP TO-220AB BUZ80A.pdf .Typical RDS(on)=2.5 Ω
.AVALANCHE RUGGED TECHNOLOGY
.100% AVALANCHE TESTED
.REPETITIVE AVALANCHE DATA AT 100℃
.LOW INPUT CAPACITANCE
.LOW GATE CHARGE
.APPLICATION ORIENTED CHARACTERIZATION
IRF510 ARTSCHIP TO-220AB IRF510_513.pdf The devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.
IRF511 ARTSCHIP TO-220AB IRF510_513.pdf The devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.
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Company name: ARTSCHIP ELECTRONICS CO.,LIMITED address: 76 Great Oaks Blvd.,
San Peter, CA  USA code: 518000 e-mail: wells2020@hotmail.com Copyright. 2016 ARTSCHIP ELECTRONICS CO.,LIMITED. all rights reserved. ICP 12125058